elektronische bauelemente MMDT3946 npn / pnp multi-chip transistor - $ s u -2010 rev. e page 1 of 5 rohs compliant product a suffix of ?-c? indicates halogen-free. feature complementary pair one 3904-type npn one 3906-type pnp epitaxial planer die construction ideal for low power amplification and switching marking 46 absolute maximum ratings of npn3904 at ta = 25 c parameter symbol value units collector to base voltage v cbo 60 v collector to emitter voltage v ceo 40 v emitter to base voltage v ebo 5 v collector currrent ? continuous i c 0.2 a collector power dissipation p c 0.2 w junction temperature t j 150 storage temperature t stg -55~150 sot-363 b l f h c j d g k a e millimete r millimete r ref. min. max. ref. min. max. a 2.00 2.20 g 0.100 ref. b 2.15 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.15 d 0.90 1.10 k 8 e 1.20 1.40 l 0.650 typ. f 0.15 0.35 6 c2 5 b1 4 e1 1 e2 2 b2 3 c1 e1, b1, c1 = pnp3906 e2, b2, c2 = npn3904 . .
elektronische bauelemente MMDT3946 npn / pnp multi-chip transistor 14-apr -2010 rev. e page 2 of 5 electrical characteristics of npn 3904 at ta = 25 c characteristic test condition symbol min. max. unit collector-base breakdown voltage i c =10 a, i e =0 v (br)cbo 60 v collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 40 v emitter-base breakdown voltage i e =10 a, i c =0 v (br)ebo 5 v collector cutoff current v cb =30v, i e =0 i cbo 0.05 a collector cutoff current v eb =30v, i b =0 i ceo 0.5 a emitter cutoff current v eb =5v, i c =0 i ebo 0.05 a v ce =1v, i c =0.1ma h fe(1) 40 v ce =1v, i c =1ma h fe(2) 70 v ce =1v, i c =10ma h fe(3) 100 300 v ce =1v, i c =50ma h fe(4) 60 dc current gain v ce =1v, i c =100ma h fe(5) 30 i c =10ma, i b =1ma v ce(sat)1 0.2 v collector-emitter saturation voltage i c =50ma, i b =5ma v ce(sat)2 0.3 v i c =10ma, i b =1ma v be(sat)1 0.65 0.85 v base-emitter saturation voltage i c =50ma, i b =5ma v be(sat)2 0.95 v output capacitance v cb =5v, i e =0, f=1mhz c ob 4 pf transition frequency v ce =20v, i c =20ma, f=100mhz f t 300 mhz noise figure v ce =5v, i c =0.1ma, f=1khz rg=1k ? , nf 5 db delay time t d 35 ns rise time v cc =3v, v be =0.5v, i c =10ma, i b1 =- i b2 = 1ma t r 35 ns storage time t s 200 ns fall time v cc =3v, i c =10ma, i b1 =- i b2 = 1ma t f 50 ns absolute maximum ratings of pnp 3906 at ta = 25 c parameter symbol value units collector to base voltage v cbo -40 v collector to emitter voltage v ceo -40 v emitter to base voltage v ebo -5 v collector currrent ? continuous i c -0.2 a collector power dissipation p c 0.2 w junction temperature t j 150 : storage temperature t stg -55~150 :
elektronische bauelemente MMDT3946 npn / pnp multi-chip transistor 14-apr -2010 rev. e page 3 of 5 electrical characteristics of pnp 3906 at ta = 25 c characteristic test condition symbol min. max. unit collector-base breakdown voltage i c =-10 a, i e =0 v (br)cbo -40 v collector-emitter breakdown voltage i c = -1ma, i b = 0 v (br)ceo -40 v emitter-base breakdown voltage i e =-10 a, i c =0 v (br)ebo -5 v collector cutoff current v cb =-30v, i e =0 i cbo -0.05 a emitter cutoff current v eb =-5v, i c =0 i ebo -0.05 a v ce =-1v, i c =-0.1ma h fe(1) 60 v ce =-1v, i c =-1ma h fe(2) 80 v ce =-1v, i c =-10ma h fe(3) 100 300 v ce =-1v, i c =-50ma h fe(4) 60 dc current gain v ce =-1v, i c =-100ma h fe(5) 30 i c =-10ma, i b =-1ma v ce(sat)1 -0.25 v collector-emitter saturation voltage i c =-50ma, i b =-5ma v ce(sat)2 -0.4 v i c =-10ma, i b =-1ma v be(sat)1 -0.65 -0.85 v base-emitter saturation voltage i c =-50ma, i b =-5ma v be(sat)2 -0.95 v collector output capacitance v cb =-5v, i e =0, f=1mhz c ob 4.5 pf transition frequency v ce =-20v, i c =-10ma, f=100mhz f t 250 mhz noise figure v ce =-5v, i c =-0.1ma, f=1khz rg=1k ? , nf 4 db delay time t d 35 ns rise time v cc =-3v, v be =-0.5v, i c =-10ma, i b1 =- i b2 = -1ma t r 35 ns storage time t s 225 ns fall time v cc =-3v, i c =-10ma, i b1 =- i b2 = -1ma t f 75 ns
elektronische bauelemente MMDT3946 npn / pnp multi-chip transistor 14-apr -2010 rev. e page 4 of 5 characteristic curves
elektronische bauelemente MMDT3946 npn / pnp multi-chip transistor 14-apr -2010 rev. e page 5 of 5 characteristic curves
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